KTa0.5Nb0.5O3 ferroelectric thin films: processing, characterization and application to microwave agile devices

This paper is aimed at demonstrating the high capabilities of KTa0.5Nb0.5O3 thin films for microwave agility applications. Tunable capacitors, resonators and phase shifters were realized with KTN materials. Their high frequency measurements showed, in particular, the very high tuning factors of these films under quite low electric field.

Mots clés

Ferroelectrics Interdigital Capacitors Phase Shifters Stub Resonators Thin Films

Domaines

Electromagnétisme

Fichier principal

Frequenz_manuscript_Laur.pdf (1.13 Mo)

Origine	Fichiers produits par l'(les) auteur(s)

Arnaud-Gides Moussavou : Connectez-vous pour contacter le contributeur

https://hal.science/hal-00276991

Soumis le : lundi 5 mai 2008-10:20:32

Dernière modification le : vendredi 5 juillet 2024-12:36:09

Archivage à long terme le : vendredi 28 mai 2010-18:18:24

Dates et versions

hal-00276991 , version 1 (05-05-2008)

Identifiants

HAL Id : hal-00276991 , version 1

Citer

Vincent Laur, Arnaud-Gides Moussavou, Anthony Rousseau, Paul Laurent, Gérard Tanné, et al.. KTa0.5Nb0.5O3 ferroelectric thin films: processing, characterization and application to microwave agile devices. 2008. ⟨hal-00276991⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

UNIV-BREST UNIV-NANTES UNIV-RENNES1 CNRS INSA-RENNES IETR LAB-STICC_UBO ISCR ISCR-CSM UR1-UFR-SPM UR1-MATH-STIC UR1-UFR-ISTIC UNIV-RENNES INSA-GROUPE UR1-MATH-NUM UR1-MMS NANTES-UNIVERSITE

203 Consultations

193 Téléchargements