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Article Dans Une Revue Physica B: Condensed Matter Année : 2007

Optical study of Erbium-doped-porous silicon based planar waveguides

Résumé

Planar waveguides were formed from porous silicon layers obtained on P+ substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er3+ ions in the IR range and the decay curve of the 1.53 μm emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 μm after doping.
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hal-00275713 , version 1 (09-11-2021)

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Paternité - Pas d'utilisation commerciale

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Adel Najar, H. Ajlani, Joël Charrier, Nathalie Lorrain, Severine Haesaert, et al.. Optical study of Erbium-doped-porous silicon based planar waveguides. Physica B: Condensed Matter, 2007, 396 (1-2), pp.145-149. ⟨10.1016/j.physb.2007.03.034⟩. ⟨hal-00275713⟩
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