Spectroscopy of a Bulk GaN Microcavity Grown on Si(111) - Archive ouverte HAL
Journal Articles Japanese Journal of Applied Physics Year : 2005

Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)

Abstract

We report the experimental observation of the exciton–photon strong coupling regime in a GaN microcavity. The structure has been grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO 2 /Si 3 N 4 dielectric mirror and the silicon substrate acts as the bottom one. Angle resolved reflectivity and photoluminescence experiments have allowed to demonstrate the exciton–photon strong coupling regime, characterized by a Rabi splitting of 31 meV at 5 K. From the modeling of experiments, the oscillator strengths of excitons A and B are evaluated and compared to the values previously published. Then, the design of the bulk microcavity is optimized in order to maintain the strong coupling regime at room temperature; our calculations predict a Rabi splitting of 33 meV at 300 K in this case. A second kind of structure based on GaN/AlGaN quantum wells is also proposed, leading to an expected splitting of 19 meV at 300 K.
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Dates and versions

hal-04003530 , version 1 (24-02-2023)

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Nadège Ollier, Franck Natali, Declan Byrne, Pierre Disseix, Martine Mihailovic, et al.. Spectroscopy of a Bulk GaN Microcavity Grown on Si(111). Japanese Journal of Applied Physics, 2005, 44 (7A), pp.4902. ⟨10.1143/JJAP.44.4902⟩. ⟨hal-04003530⟩
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