Observation of Rabi splitting in a bulk GaN microcavity grown on silicon. - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2003
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hal-00272519 , version 1 (11-04-2008)

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  • HAL Id : hal-00272519 , version 1

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N. Antoine-Vincent, F. Natali, D. Byrne, Aime Vasson, Pierre Disseix, et al.. Observation of Rabi splitting in a bulk GaN microcavity grown on silicon.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, pp.15316. ⟨hal-00272519⟩

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PRES_CLERMONT CNRS
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