Observation of Rabi splitting in a bulk GaN microcavity grown on silicon. - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2003
No file

Dates and versions

hal-00272519 , version 1 (11-04-2008)

Identifiers

  • HAL Id : hal-00272519 , version 1

Cite

N. Antoine-Vincent, F. Natali, D. Byrne, Aime Vasson, Pierre Disseix, et al.. Observation of Rabi splitting in a bulk GaN microcavity grown on silicon.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, pp.15316. ⟨hal-00272519⟩

Collections

PRES_CLERMONT CNRS
23 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More