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Article Dans Une Revue Solid-State Electronics Année : 2008

Modeling of Strained CMOS on Disposable SiGe Dots : shape impacts on electrical/thermal characteristics

Y. Zhuang
  • Fonction : Auteur
J. N. Burghartz
  • Fonction : Auteur

Résumé

We proposed a new non-planar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress from the underlaying SiGe 3D islands. We show that more than 50% higher mobilities of electrons can be obtained as indicated by 3D simulations performed throughout the entire fabrication process. Then, fully-depleted SOI MOSFET and d-Dot MOSFET are compared in term of short channel effects, parasitic capacitance effects and self-heating effects.

Dates et versions

hal-00261552 , version 1 (07-03-2008)

Identifiants

Citer

Sebastien Fregonese, Y. Zhuang, J. N. Burghartz. Modeling of Strained CMOS on Disposable SiGe Dots : shape impacts on electrical/thermal characteristics. Solid-State Electronics, 2008, 54 (9), pp2321-2324. ⟨10.1016/j.sse.2008.01.022⟩. ⟨hal-00261552⟩
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