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              <p>A novel micro-machining technique for silicon deep anisotropic etching and isolating porous siliconstructure formationis developped in this paper. This method combines aluminum thermomigration through a N type silicon wafer and silicon electrochemicaletching in a HF-based solution.Using this technique, high aspect ratio trenches (1:5) and porous silicopn isolating regions have been achievedthrough the entire thickness of the silicon wafers. Each rate measurements have been performed varying the anodization current density. A maximum value of 22µm/mn has been obtained. Moreover the porosity behavior with the current density increase is also discussed.</p>
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