Photomixing at 1.55 µm in ion-irradiated In0.53Ga0.47As on InP

We report the first demonstration of a terahertz photomixer made of ion-irradiated In 0.53 Ga 0.47 As lattice-matched to InP and fiber-optic coupled with the 1.55 μm wavelength drive lasers. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.

Mots clés

Optical sensors Gallium arsenide Photoconductivity Bolometers Optical receivers Indium phosphide Voltage Frequency measurement Power lasers Laser excitation

Domaines

Sciences de l'ingénieur [physics]

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https://hal.science/hal-00247428

Soumis le : vendredi 8 février 2008-08:14:46

Dernière modification le : mercredi 24 janvier 2024-09:54:18

Dates et versions

hal-00247428 , version 1 (08-02-2008)

Identifiants

HAL Id : hal-00247428 , version 1
DOI : 10.1109/ICIMW.2006.368416

Citer

Juliette Mangeney, Nicolas Chimot, Paul Crozat, Karine Blary, Jean-Francois Lampin, et al.. Photomixing at 1.55 µm in ion-irradiated In0.53Ga0.47As on InP. Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, Sep 2006, Shanghai, China. pp.208, ⟨10.1109/ICIMW.2006.368416⟩. ⟨hal-00247428⟩

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