“2 to 23 GHz BiFET Low Noise Amplifier design flow and implementations in 0.25µm SiGe BiCMOS technology” - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Analog Integrated Circuits and Signal, Springer Science & Business Media Année : 2008

“2 to 23 GHz BiFET Low Noise Amplifier design flow and implementations in 0.25µm SiGe BiCMOS technology”

Cristian Moreira
  • Fonction : Auteur
Thierry Taris
  • Fonction : Auteur
Jean B. Begueret
  • Fonction : Auteur
Didier Belot
  • Fonction : Auteur

Résumé

Abstract – Two BiFET LNAs are here reported, implemented in a 0.25µm BiCMOS technology from ST Microelectronics. First of them depicts at 15.5dB and 2.85dB, S21 and Noise Figure (NF) respectively, under 2mA current consumption. The second realization operates at 23GHz for Mini-Link application. It provides a 14dB gain and 7dB@22GHz NF for a 8.2 mA current consumption under 2.5 V. Both circuits were designed according to a design flow.
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Dates et versions

hal-00214250 , version 1 (23-01-2008)

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  • HAL Id : hal-00214250 , version 1

Citer

Cristian Moreira, Thierry Taris, Eric Kerherve, Pierre Henry Jarry, Jean B. Begueret, et al.. “2 to 23 GHz BiFET Low Noise Amplifier design flow and implementations in 0.25µm SiGe BiCMOS technology”. Analog Integrated Circuits and Signal, Springer Science & Business Media, 2008, 10pp. ⟨hal-00214250⟩
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