Conference Papers
Year : 2007
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https://hal.science/hal-00204821
Submitted on : Tuesday, January 15, 2008-3:51:05 PM
Last modification on : Friday, March 24, 2023-2:52:49 PM
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- HAL Id : hal-00204821 , version 1
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S. Duguay, J.J. Grob, A. Slaoui, P. Kern. Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties. Material Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05. ⟨hal-00204821⟩
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