Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties - Archive ouverte HAL Access content directly
Conference Papers Year : 2007

Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties

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hal-00204821 , version 1 (15-01-2008)

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  • HAL Id : hal-00204821 , version 1

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S. Duguay, J.J. Grob, A. Slaoui, P. Kern. Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties. Material Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05. ⟨hal-00204821⟩

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