GISAXS study of porous dielectrics used in advanced microelectronics connections - Archive ouverte HAL
Article Dans Une Revue Journal of Applied Crystallography Année : 2007

GISAXS study of porous dielectrics used in advanced microelectronics connections

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hal-00204743 , version 1 (15-01-2008)

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  • HAL Id : hal-00204743 , version 1

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V. Jousseaume, J.P. Simon, G. Rolland. GISAXS study of porous dielectrics used in advanced microelectronics connections. Journal of Applied Crystallography, 2007, 40, pp.s363-s366. ⟨hal-00204743⟩

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