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Article Dans Une Revue Semiconductors Année : 2007

In-depth resolution for LBIC technique by two-photon absorption

Résumé

A detailed study of the in-depth dependence of the laser-beam-induced current (LBIC) technique by sub-bandgap two-photon absorption (TPA) has been carried out in this paper. The strong focal dependence mechanism for TPA has been demonstrated by our studies through comparing the TPA technique with traditional single-photon-absorption-based ones. Dependence of the TPA-induced single-event transient response in linear integrated circuits on depth and position is investigated. Our results illustrate an interesting in-depth resolution for the TPA technique, which enables three-dimensional imaging of charge-collecting volumes through the backside of integrated circuits.

Domaines

Electronique

Dates et versions

hal-00204572 , version 1 (15-01-2008)

Identifiants

Citer

Dong Yun Wan, Vincent Pouget, Alexandre Douin, Patrice Jaulent, Dean Lewis, et al.. In-depth resolution for LBIC technique by two-photon absorption. Semiconductors, 2007, 41 (4), pp.371-375, 10.1134/S106378260704001X. ⟨10.1134/S106378260704001X⟩. ⟨hal-00204572⟩
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