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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2006

Influence of Laser Pulse Duration in Single Event Upset Testing

Résumé

Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100µs. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically.

Domaines

Electronique
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Dates et versions

hal-00204547 , version 1 (14-01-2008)

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Citer

Alexandre Douin, Vincent Pouget, Frédéric Darracq, Dean Lewis, Pascal Fouillat, et al.. Influence of Laser Pulse Duration in Single Event Upset Testing. IEEE Transactions on Nuclear Science, 2006, 53 (4), pp.1799-1805, 10.1109/TNS.2006.880939. ⟨10.1109/TNS.2006.880939⟩. ⟨hal-00204547⟩
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