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Article Dans Une Revue Journal of Applied Crystallography Année : 2007

GISAXS study of nanocavities and defects induced by helium and neon implantation in silicon

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hal-00204261 , version 1 (14-01-2008)

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  • HAL Id : hal-00204261 , version 1

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D. Babonneau, S. Peripolli, M.F. Beaufort, J-F. Barbot, J.P. Simon. GISAXS study of nanocavities and defects induced by helium and neon implantation in silicon. Journal of Applied Crystallography, 2007, 40, pp.s350-s354. ⟨hal-00204261⟩

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