TCAD methodology for ESD robustness prediction of smart power ESD devices - Archive ouverte HAL
Article Dans Une Revue IEEE Transactions on Device and Materials Reliability Année : 2006

TCAD methodology for ESD robustness prediction of smart power ESD devices

Résumé

This work presents a new method to predict the ESD protection robustness of a device with TCAD simulations. Tested on different devices and two Smart Power technologies, the results are validated through electrical measurement and failure analysis. Failure current is always predicted with a good accuracy compared to technology spreading. In addition, the methodology provides a significant simulation time speedup compared to classical methods based on a temperature criterion.
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Dates et versions

hal-00195294 , version 1 (10-12-2007)

Identifiants

  • HAL Id : hal-00195294 , version 1

Citer

Christophe Salamero, Nicolas Nolhier, Amaury Gendron, Marise Bafleur, Patrice Besse, et al.. TCAD methodology for ESD robustness prediction of smart power ESD devices. IEEE Transactions on Device and Materials Reliability, 2006, 6 (3), pp.399-407. ⟨hal-00195294⟩
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