Large area silicon epitaxy using pulsed DC magnetron sputtering deposition
Résumé
Pulsed DC magnetron sputtering is used for deposition of large area crystalline (200 mm) silicon 100nm thin films. p doped Si substrates are flashed (Ts = 900 °C) under high vacuum (5 10-6 Pa) for removing native oxide and restoring surface crystallinity. Subsequent boron doped Si homoepitaxy is obtained at substrate temperature below 500°C for pulse frequency of 150 kHz.
| Origine | Fichiers produits par l'(les) auteur(s) |
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