ELECTROSTATICALLY-DRIVEN RESONATOR ON SOI WITH IMPROVED TEMPERATURE STABILITY
Résumé
This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/°C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/°C. Design, optimisation, experimental results with post process simulation and prospective work are presented.
Domaines
Architectures Matérielles [cs.AR]| Origine | Fichiers produits par l'(les) auteur(s) |
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