The effect of oxidation on physical properties of porous silicon layers for optical applications - Archive ouverte HAL
Article Dans Une Revue Applied Surface Science Année : 2006

The effect of oxidation on physical properties of porous silicon layers for optical applications

Résumé

In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O2. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

Dates et versions

hal-00187580 , version 1 (14-11-2007)

Identifiants

Citer

Parastesh Pirasteh, Joël Charrier, Ali Soltani, Severine Haesaert, Lazhar Haji, et al.. The effect of oxidation on physical properties of porous silicon layers for optical applications. Applied Surface Science, 2006, Vol.253 (Issue 4), pp.1999-2002. ⟨10.1016/j.apsusc.2006.03.083⟩. ⟨hal-00187580⟩
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