Switching performances comparison of 1200V punch-through and nonpunch-through IGBTs under hard-switching at high Temperature - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 1998

Switching performances comparison of 1200V punch-through and nonpunch-through IGBTs under hard-switching at high Temperature

Fichier non déposé

Dates et versions

hal-00185562 , version 1 (06-11-2007)

Identifiants

  • HAL Id : hal-00185562 , version 1

Citer

Stéphane Azzopardi, Jean-Michel Vinassa, Eric Woirgard. Switching performances comparison of 1200V punch-through and nonpunch-through IGBTs under hard-switching at high Temperature. Proceedings of the IEEE Power Electronics Specialist Conference (PESC), 1998, Japan. pp.1201-1207. ⟨hal-00185562⟩
45 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More