Traps characterization inSi-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2005

Traps characterization inSi-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques

Fichier non déposé

Dates et versions

hal-00183504 , version 1 (30-10-2007)

Identifiants

  • HAL Id : hal-00183504 , version 1

Citer

Alberto Sozza, Christian Dua, N. Sarazin, E. Morvan, Sylvain Delage, et al.. Traps characterization inSi-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques. Proceeding of International Workshop on Heterostructures HETECH, 2005, Slovakia. pp.1. ⟨hal-00183504⟩
116 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More