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Article Dans Une Revue Journal of Crystal Growth Année : 2008

Growth of GaN by MOVPE on ZnO-buffered c-sapphire Substrates

Résumé

The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (~1.8%). In this study we have successfully grown by MOVPE GaN on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and Micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.

Dates et versions

hal-00181628 , version 1 (07-04-2008)

Identifiants

Citer

A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by MOVPE on ZnO-buffered c-sapphire Substrates. Journal of Crystal Growth, 2008, 310, pp.944-947. ⟨10.1016/j.jcrysgro.2007.11.137⟩. ⟨hal-00181628⟩
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