Growth of GaN by MOVPE on ZnO-buffered c-sapphire Substrates
Résumé
The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (~1.8%). In this study we have successfully grown by MOVPE GaN on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and Micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.