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Article Dans Une Revue Applied Physics Letters Année : 2007

Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate

Résumé

The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes place at ∼420K (instead of 400K for unconstrained single crystals), whereas the film is under high tensile elastic in-plane strain (0.34%) and high inhomogeneous strain (0.69%) along the growth direction. Comparison of the experimental results with recent theoretical calculations suggests a monoclinic ferroelectric phase at room temperature, where interface “dead layer” plays a key role.
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Dates et versions

hal-00176618 , version 1 (04-10-2007)

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B. Dkhil, E. Defay, J. Guillan. Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate. Applied Physics Letters, 2007, 90 (2), pp.022908. ⟨10.1063/1.2430915⟩. ⟨hal-00176618⟩
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