Article Dans Une Revue Physical Review Letters Année : 2002

Ab initio Study of Misfit Dislocations at the SiC/Si(001) Interface

Résumé

The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for the most stable geometry: we found interface states localized in the gap that may be a source of failure of electronic devices.

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hal-00171009 , version 1 (11-09-2007)

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Giancarlo Cicero, Laurent Pizzagalli, Alessandra Catellani. Ab initio Study of Misfit Dislocations at the SiC/Si(001) Interface. Physical Review Letters, 2002, 89 (15), pp.156101. ⟨10.1103/PhysRevLett.89.156101⟩. ⟨hal-00171009⟩

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