Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Vacuum Science and Technology Année : 2004

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

Résumé

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above 200. rf measurements on 8×10 μm2 devices exhibit a cut-off frequency fT of 34 GHz. Although most publications concerning production of such devices are related to metalorganic chemical vapor deposition grown material, we intend to demonstrate that MBE is a very efficient method for high volume production of GaInP/GaAs HBT. In particular we emphasize the fact that MBE growth for production of benchmark HBT devices is a high yield process that is attainable in a very short time. In order to optimize device characteristics further work focuses on metallurgical and electrical emitter/base interface studies by means of photoluminescence and I/V measurements on processed PN junctions.

Dates et versions

hal-00162756 , version 1 (16-07-2007)

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A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, et al.. Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy. Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩
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