Journal Articles
Applied Physics Letters
Year : 2003
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https://hal.science/hal-00162730
Submitted on : Monday, July 16, 2007-9:43:38 AM
Last modification on : Friday, March 24, 2023-2:52:49 PM
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- HAL Id : hal-00162730 , version 1
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F. Natali, F. Semond, J. Massies, D. Byrne, S. Laugt, et al.. Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111). Applied Physics Letters, 2003, 82, pp.1386-1388. ⟨hal-00162730⟩
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