Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111) - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2003

Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali
  • Function : Author
F. Semond
  • Function : Author
J. Massies
  • Function : Author
D. Byrne
  • Function : Author
S. Laugt
  • Function : Author
O. Tottereau
  • Function : Author
P. Vennegues
  • Function : Author
E. Dumont
  • Function : Author
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Dates and versions

hal-00162730 , version 1 (16-07-2007)

Identifiers

  • HAL Id : hal-00162730 , version 1

Cite

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laugt, et al.. Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111). Applied Physics Letters, 2003, 82, pp.1386-1388. ⟨hal-00162730⟩
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