Impact of radiation effects on AlGaAs/GaAs, InGaN/GaN and AlGaInP/GaP packaged light emitting diodes for space applications - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2006

Impact of radiation effects on AlGaAs/GaAs, InGaN/GaN and AlGaInP/GaP packaged light emitting diodes for space applications

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hal-00162386 , version 1 (13-07-2007)

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  • HAL Id : hal-00162386 , version 1

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O. Gilard, L. Bechou, B. Kurz, O. Rehioui, M.L. Bourqui, et al.. Impact of radiation effects on AlGaAs/GaAs, InGaN/GaN and AlGaInP/GaP packaged light emitting diodes for space applications. RADECS 2006 WORKSHOP, 2006, France. ⟨hal-00162386⟩
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