Oxynitride perovskite LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by reactive sputtering - Archive ouverte HAL Access content directly
Journal Articles Progress in Solid State Chemistry Year : 2007

Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering


This paper reports on the first study of structural and optical properties of reactively RF-sputtered lanthanum titanium oxynitride thin films using an original oxynitride LaTiO2N target and an argon-nitrogen mixture as reactive plasma. The depositions were carried out by varying the process parameters such as RF power, total pressure, argon and nitrogen rates and substrate temperature. Wavelength dispersive spectrometry (WDS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-visible spectroscopy show that titanate lanthanum oxynitride compounds can exist as a domain composition, LaTiOxNy. Films prepared in pure argon are oxide films, transparent, amorphous and insulating. Polycrystalline and [001]-textured oxynitride thin films, with different nitrogen contents, can be deposited on SrTiO3 substrates, depending on the sputtering conditions. As expected, the introduction of nitrogen in the coatings leads to a band gap narrowing. Oxynitrides' thin films are thus coloured and semiconductive.

Dates and versions

hal-00161285 , version 1 (10-07-2007)



Claire Le Paven-Thivet, Laurent Le Gendre, Jérome Le Castrec, François Cheviré, Franck Tessier, et al.. Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering. Progress in Solid State Chemistry, 2007, 35 (2-4), pp.299-308. ⟨10.1016/j.progsolidstchem.2007.01.012⟩. ⟨hal-00161285⟩
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