Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content - Archive ouverte HAL
Communication Dans Un Congrès Année : 2000

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

M. Zaknoune
S. Bollaert
A. Cappy
Fichier non déposé

Dates et versions

hal-00159005 , version 1 (02-07-2007)

Identifiants

  • HAL Id : hal-00159005 , version 1

Citer

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy. Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content. 2000, pp.102-105. ⟨hal-00159005⟩
14 Consultations
0 Téléchargements

Partager

More