AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT - Archive ouverte HAL Access content directly
Conference Papers Year : 2000

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

O. Schuler
  • Function : Author
X. Wallart
S. Piotrowicz
  • Function : Author
F. Mollot
D. Theron
Y. Crosnier
  • Function : Author
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Dates and versions

hal-00159004 , version 1 (02-07-2007)

Identifiers

  • HAL Id : hal-00159004 , version 1

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M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, et al.. AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT. 2000, pp.353-356. ⟨hal-00159004⟩
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