0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2000

0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

Résumé

High performance In0.32Al0.68As/In0.33Ga0.67As double heterojunction metamorphic high electron mobility transistors (DH-MMHEMT) have been grown by molecular beam epitaxy on GaAs substrates. An inverse step metamorphic buffer has been used to reach a relaxation rate close to 98% and a mean cross hatch of 2 nm. The DH-MMHEMT structure with a gate length of 0.1 μm exhibits a peak transconductance of 750 mS mm−1, a current density of 900 mA mm−1, a current gain cutoff frequency Ft of 150 GHz and a maximum oscillation frequency Fmax of 250 GHz. These results clearly demonstrate the good electron transport properties of a double heterointerface structure due to the high relaxation, the good filtering of dislocations and the good control of the inverted InGaAs/InAlAs interface.

Dates et versions

hal-00158982 , version 1 (02-07-2007)

Identifiants

Citer

M. Zaknoune, Y. Cordier, S. Bollaert, D. Ferre, D. Theron, et al.. 0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs. Solid-State Electronics, 2000, 44 (9), pp.1685-1688. ⟨10.1016/S0038-1101(00)00060-5⟩. ⟨hal-00158982⟩
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