The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ? - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2000

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

D. Bernard-Loridant
E. Constant
  • Function : Author
M. Constant
  • Function : Author
Jacques Chevallier
  • Function : Author
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hal-00158582 , version 1 (29-06-2007)

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  • HAL Id : hal-00158582 , version 1

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S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier. The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?. Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩
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