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Article Dans Une Revue European Physical Journal: Applied Physics Année : 2000

Elaboration and characterization of PNZT thin films deposited on silicon by RF cathodic sputtering

Eric Cattan
Denis Remiens

Résumé

Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films have been grown on platinized silicon substrates by RF magnetron sputtering followed by a post-annealing treatment. The niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.% The effects of the Nb introduction on the PZT electrical properties, i.e., dielectric and ferroelectric ones have been investigated. We have found that the relative dielectric constant (\varepsilon_r) is very sensitive to the Nb introduction; (\varepsilon_r) reaches 1100 for a PNZT film doped at 2 at.% in comparison to 820 for a PZT film. The ferroelectric properties are also dependent of the doping level; in particular the remnant polarization reaches its maximum value (17 μC/cm2) for a 2 at.% Nb doped PZT film.
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Dates et versions

hal-00158541 , version 1 (29-06-2007)

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Paternité - Pas d'utilisation commerciale

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T. Haccart, Eric Cattan, Denis Remiens. Elaboration and characterization of PNZT thin films deposited on silicon by RF cathodic sputtering. European Physical Journal: Applied Physics, 2000, 11, pp.103-106. ⟨10.1051/epjap:2000150⟩. ⟨hal-00158541⟩
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