Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2000

Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study

F. Mollot
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hal-00158221 , version 1 (28-06-2007)

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  • HAL Id : hal-00158221 , version 1

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D. Vignaud, F. Mollot. Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study. Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China. ⟨hal-00158221⟩
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