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Communication Dans Un Congrès Année : 2006

Optical properties of erbium doped porous silicon waveguides

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Planar and buried channel porous silicon waveguides (WG) were prepared from p+-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl3-saturated solution. Erbium concentration of around 1020 at/cm3 was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 μs was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.
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hal-00154121 , version 1 (09-11-2021)

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Adel Najar, Joel Charrier, Hosni Ajlani, Nathalie Lorrain, Habib Elhouichet, et al.. Optical properties of erbium doped porous silicon waveguides. European Materials Research Society Spring Meeting 2006 (E-MRS Spring Meeting 2006), Jun 2006, Nice, France. pp.245-248, ⟨10.1016/j.jlumin.2006.08.072⟩. ⟨hal-00154121⟩
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