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Communication Dans Un Congrès Année : 2007

A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometry

Résumé

We use reflectometry coupled to transfer matrix formalism in order to investigate the comparative effect of surface (localized) and volume (distributed) losses inside a porous silicon monolayer. Both are modeled as fictive absorption. Surface losses are described as a Dirac-like singularity of permittivity localized at an interface whereas volume losses are described trough the imaginary part of the porous silicon complex permittivity. A good agreement with experimental data is determined by this formalism.

Dates et versions

hal-00154063 , version 1 (12-06-2007)

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Parastesh Pirasteh, Joel Charrier, Yann G. Boucher, Yannick Dumeige. A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometry. Porous Semiconductors - Science and Technology 5th international conference (PSST 2006), Mar 2006, Sitges-Barcelona, Spain. pp.1971-1975, ⟨10.1002/pssc.200674345⟩. ⟨hal-00154063⟩
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