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Communication Dans Un Congrès Année : 2006

Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications

Résumé

Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance
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Dates et versions

hal-00152973 , version 1 (08-06-2007)

Identifiants

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Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger. Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications. European Microwave Integrated Circuits Conference, Sep 2006, Manchester, United Kingdom. 4 pp., ⟨10.1109/EMICC.2006.282657⟩. ⟨hal-00152973⟩
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