Interfaces between gamma-Al2O3 and silicon - HAL Accéder directement au contenu
Article dans une revue Materials Science in Semiconductor Processing Année : 2006

Interfaces between gamma-Al2O3 and silicon

Résumé

As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a g-Al2O3 buffer layer between the high-k and the substrate. We firstly studied the structural matching of g-Al2O3(0 0 1) with a Si(0 0 1)-pð2 1Þ reconstructed surface. According to experimental data and computations in the density functional theory framework, we found stable interfaces between g-Al2O3 and Si which encounters surface reconstruction changes. These interfaces satisfy the criterion of an insulating buffer layer.
Loading...

Dates et versions

hal-00152970, version 1 (08-06-2007)

Identifiants

Citer

Pierre Boulenc, Isabelle Devos. Interfaces between gamma-Al2O3 and silicon. Materials Science in Semiconductor Processing, 2006, 9 (6), pp.949-953. ⟨10.1016/j.mssp.2006.10.043⟩. ⟨hal-00152970⟩
28 Consultations
0 Téléchargements
Dernière date de mise à jour le 25/06/2024
comment ces indicateurs sont-ils produits

Altmetric

Partager

Gmail Facebook Twitter LinkedIn Plus