Parameter extraction and geometry effects on the electronic properties of submicron MOS transistors - Archive ouverte HAL Access content directly
Journal Articles Jurnal Fizik UTM Year : 2001
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hal-00152635 , version 1 (07-06-2007)

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  • HAL Id : hal-00152635 , version 1

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H. Bakhtiar, A. Soltani, A. Hoffmann, J.P. Charles. Parameter extraction and geometry effects on the electronic properties of submicron MOS transistors. Jurnal Fizik UTM, 2001, 8, pp.1-22. ⟨hal-00152635⟩
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