Hydrogen passivation and local electron-beam reactivation of Silicon dopants in GaAs characterized by differential conductance and STM spectroscopy measurements - Archive ouverte HAL
Communication Dans Un Congrès Année : 2001

Hydrogen passivation and local electron-beam reactivation of Silicon dopants in GaAs characterized by differential conductance and STM spectroscopy measurements

S. Silvestre
  • Fonction : Auteur
J.P. Nys
  • Fonction : Auteur
B. Grandidier
D. Bernard-Loridant
D. Stievenard
E. Constant
  • Fonction : Auteur
Jacques Chevallier
  • Fonction : Auteur
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Dates et versions

hal-00152514 , version 1 (07-06-2007)

Identifiants

  • HAL Id : hal-00152514 , version 1

Citer

Thierry Melin, S. Silvestre, J.P. Nys, B. Grandidier, D. Bernard-Loridant, et al.. Hydrogen passivation and local electron-beam reactivation of Silicon dopants in GaAs characterized by differential conductance and STM spectroscopy measurements. 11th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, 2001, Vancouver, Canada. ⟨hal-00152514⟩
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