Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by gas source molecular beam epitaxy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2001

Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by gas source molecular beam epitaxy

D. Deresmes
F. Mollot
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Dates et versions

hal-00152078 , version 1 (06-06-2007)

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  • HAL Id : hal-00152078 , version 1

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X. Wallart, D. Deresmes, F. Mollot. Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by gas source molecular beam epitaxy. Applied Physics Letters, 2001, 78, pp.2961-2963. ⟨hal-00152078⟩
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