High-power AlGaN/GaN HEMTs on resistive silicon substrate - Archive ouverte HAL Access content directly
Journal Articles Electronics Letters Year : 2002

High-power AlGaN/GaN HEMTs on resistive silicon substrate

N. Vellas
  • Function : Author
Christophe Gaquière
Jean-Claude de Jaeger
Y. Cordier
F. Semond
  • Function : Author
F. Natali
  • Function : Author
J. Massies
  • Function : Author
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Dates and versions

hal-00149694 , version 1 (28-05-2007)

Identifiers

  • HAL Id : hal-00149694 , version 1

Cite

Virginie Hoel, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, Y. Cordier, et al.. High-power AlGaN/GaN HEMTs on resistive silicon substrate. Electronics Letters, 2002, 38, pp.750-752. ⟨hal-00149694⟩
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