Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes - Archive ouverte HAL
Communication Dans Un Congrès Année : 2007

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

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hal-00149053 , version 1 (24-05-2007)

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  • HAL Id : hal-00149053 , version 1

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Aurélie Thuaire, Michel Mermoux, Edwige Bano, Alexandre Crisci, Francis Baillet, et al.. Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes. European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912. ⟨hal-00149053⟩

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