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Communication Dans Un Congrès Année : 2002

Monte Carlo study of electron transport in AlSb/InAs HEMTS structures

Résumé

A Monte Carlo model of in-plane electron transport in InAs/AlSb heterostructures is presented. Special attention has been paid to the effects of nonparabolicity, which are crucial for such a narrow gap system. Electron states are obtained from a Ben Daniel-Duke equation with energy-dependent effective mass. The effect of band mixing on scattering rates is included, at an approximate level, through the use of a "Bloch overlap factor". It has been shown that neglecting this factor leads to a strong underestimation of electron mobility, whereas our model gives realistic values. We have studied a standard single well structure and a more sophisticated double well structure. In the latter case, the electron transfer between the two coupled wells has been discussed.
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Dates et versions

hal-00148647 , version 1 (23-05-2007)

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Jean-Luc Thobel, Olivier Bonno, Hervé Boutry, François Dessenne. Monte Carlo study of electron transport in AlSb/InAs HEMTS structures. 14th Indium Phosphide and Related Materials Conference, May 2002, Stockholm, Sweden. pp.185-188, ⟨10.1109/ICIPRM.2002.1014301⟩. ⟨hal-00148647⟩
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