Terahertz frequency difference from vertically integrated low temperature grown GaAs photodetector - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2002

Terahertz frequency difference from vertically integrated low temperature grown GaAs photodetector

S. Arscott
D. Lippens
  • Fonction : Auteur
Gaël Mouret
Robin Bocquet
  • Fonction : Auteur
  • PersonId : 1196820
  • IdRef : 096652578
Jean-Francois Lampin
L. Desplanque
F. Mollot

Résumé

We report on the development of a photoconductive detector based on low-temperature-grown GaAs which is vertically integrated with terahertz spiral antennas. A non steady-state velocity overshoot effect was expected in the photoresponse with a responsivity of 0.04 A/W at a bias voltage of 8 V. Photomixing experiments using two optical 0.8 μm beating lasers show a 3 dB bandwith of 700 GHz with a radiation power at terahertz frequency of 0.5 μW under 2×30 mW optical pumping.
Fichier non déposé

Dates et versions

hal-00148642 , version 1 (23-05-2007)

Identifiants

  • HAL Id : hal-00148642 , version 1

Citer

Emilien Peytavit, S. Arscott, D. Lippens, Gaël Mouret, S. Matton, et al.. Terahertz frequency difference from vertically integrated low temperature grown GaAs photodetector. Applied Physics Letters, 2002, 81 (7), pp.1174-1176. ⟨hal-00148642⟩
20 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More