0.25 µm fully-depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with partially-depleted devices for high frequency noise parameters - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2002

0.25 µm fully-depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with partially-depleted devices for high frequency noise parameters

Abstract

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices present a state of the art NFmin of 0.8 dB and high Gass of 13 dB at 6 GHz, at , at 80 μm total gate width. A extrapolated maximum oscillation frequency of about 70 GHz has been obtained at and Jds=100 mA/mm.

Dates and versions

hal-00147836 , version 1 (21-05-2007)

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Cite

M. Vanmackelberg, C. Raynaud, O. Faynot, J.L. Pelloie, C. Tabone, et al.. 0.25 µm fully-depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with partially-depleted devices for high frequency noise parameters. Solid-State Electronics, 2002, 46 (3), pp.379-386. ⟨10.1016/S0038-1101(01)00120-4⟩. ⟨hal-00147836⟩
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