Electron-beam-induced reactivation of Si dopants in hydrogenated 2D AlGaAs heterostructures : a possible new route of fabricating III-V nanostructures - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2003

Electron-beam-induced reactivation of Si dopants in hydrogenated 2D AlGaAs heterostructures : a possible new route of fabricating III-V nanostructures

D. Bernard-Loridant
E. Constant
  • Fonction : Auteur
Didier Decoster
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Dates et versions

hal-00146558 , version 1 (15-05-2007)

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  • HAL Id : hal-00146558 , version 1

Citer

L. Kurowski, D. Bernard-Loridant, E. Constant, Didier Decoster. Electron-beam-induced reactivation of Si dopants in hydrogenated 2D AlGaAs heterostructures : a possible new route of fabricating III-V nanostructures. 7th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2003, Lille, France. ⟨hal-00146558⟩
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