Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain - Archive ouverte HAL Access content directly
Conference Papers Year : 2003

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

A. Laszcz
  • Function : Author
J. Katcki
  • Function : Author
J. Ratajczak
  • Function : Author
Emmanuel Dubois
X. Wallart
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Dates and versions

hal-00146424 , version 1 (15-05-2007)

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  • HAL Id : hal-00146424 , version 1

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A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, et al.. Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain. European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩
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