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Article Dans Une Revue Semiconductor Science and Technology Année : 2002

Room Temperature Laser Emission of 1.5 µm from InAs/InP(311)B Quantum Dots

Résumé

We report on the 1.5 μm laser emission from InAs quantum dots (QDs) grown on a InP(311)B substrate. The control of the optical wavelength emission is obtained by a two-step modified growth procedure, called the 'double cap' procedure. This enables us to obtain a 1.55 μm optical emission from InAs/InP(311)B QDs, with a narrow height dispersion. Laser emission on a six-stacked InAs QD layer sample has been demonstrated with optical excitation at room temperature. Lasing has been obtained on an excited state, for a low optical excitation density of 10 kW cm−2. This shows that a QD laser could emit at the optical telecommunication wavelength.

Dates et versions

hal-00145613 , version 1 (10-05-2007)

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Citer

Cyril Paranthoën, Nicolas Bertru, Bertrand Lambert, Olivier Dehaese, Alain Le Corre, et al.. Room Temperature Laser Emission of 1.5 µm from InAs/InP(311)B Quantum Dots. Semiconductor Science and Technology, 2002, Vol.17 (n° 2), pp.L5-L7. ⟨10.1088/0268-1242/17/2/102⟩. ⟨hal-00145613⟩
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