High microwave and noise performance of 0.17µm AlGaN/GaN HEMTs on high-resistivity silicon substrates - Archive ouverte HAL
Journal Articles IEEE Electron Device Letters Year : 2004

High microwave and noise performance of 0.17µm AlGaN/GaN HEMTs on high-resistivity silicon substrates

A. Minko
  • Function : Author
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
Virginie Hoel
Sylvie Lepilliet
Gilles Dambrine
Jean-Claude de Jaeger
Y. Cordier
F. Semond
  • Function : Author
F. Natali
  • Function : Author
J. Massies
  • Function : Author

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https://hal.science/hal-00141951

Submitted on : Tuesday, April 17, 2007-8:33:50 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00141951 , version 1 (17-04-2007)

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  • HAL Id : hal-00141951 , version 1

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A. Minko, Virginie Hoel, Sylvie Lepilliet, Gilles Dambrine, Jean-Claude de Jaeger, et al.. High microwave and noise performance of 0.17µm AlGaN/GaN HEMTs on high-resistivity silicon substrates. IEEE Electron Device Letters, 2004, 25, pp.167-169. ⟨hal-00141951⟩

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