Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures
Résumé
The temperature coefficient of the breakdown voltage of 6H-SiC p-n structures has been investigated. It is shown that the temperature dependence of the breakdown voltage can be explained by charge exchange on deep acceptor levels in the space charge layer. The computational results are in good agreement with the experimental data obtained for boron-doped 6H-SiC p-n structures. (C) 1997 American Institute of Physics.