Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides
Résumé
InGaAsP/InP micro-waveguides are fabricated by a deep (>3 μm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 μm and 0.5 μm. The measured losses range from 2 dB/mm to 14 dB/mm.